ASML: Samsung to begin High-NA EUV volume manufacturing in 2028, TSMC in 2030

ASML said Samsung is set to deploy High-NA EUV for volume manufacturing by 2028, while TSMC will begin using the same technology from 2030, according to Bloomberg reporting citing the sole EUV equipment maker.

High-NA EUV (high numerical aperture extreme ultraviolet) is ASML’s top-end EUV technology. ASML says Intel and SK hynix have used it for a short time, and that it enables faster production, higher yields and denser wafers by simplifying some fabrication steps.

ASML is also working with Samsung, TSMC, Nvidia and Apple to shift from 6-inch photomasks to 12-inch masks, although ASML has official announcements for the first three. Larger masks let an EUV exposure cover more of a wafer per shot, reducing the number of shots that must be stitched and improving scanner productivity and cost efficiency.

ASML CEO Christophe Fouquet said the company expects progressive adoption of High-NA EUV along the device scaling roadmap, first using current 6-inch masks and later supported by 12-inch masks, which enable greater scanner productivity and help meet demand for smaller, faster and more energy-efficient chips. He noted strong initial support from semiconductor manufacturers, mask suppliers and partners for the initiative.

ASML states the effort aims to establish a 12-inch mask pilot line by 2031, paving the way for 12-inch High-NA lithography systems to enter advanced-node production by 2033.

Bloomberg concludes that major chipmakers will be in active High-NA EUV production in the 2028–2030 window, while many will continue on low-NA EUV or DUV, and links these commitments to ongoing AI-driven demand that is expected to keep memory and processor needs elevated, with memory demand projected to outstrip supply beyond 2030.